| TYPE | DESCRIPTION |
| Architecture | Current FB |
| Number of channels | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 10 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 12 |
| GBW (typ) (MHz) | 1700 |
| BW at Acl (MHz) | 1700 |
| Acl, min spec gain (V/V) | 1 |
| Slew rate (typ) (V/µs) | 3100 |
| Vn at flatband (typ) (nV√Hz) | 1.83 |
| Vn at 1 kHz (typ) (nV√Hz) | 4.5 |
| Iq per channel (typ) (mA) | 12.5 |
| Vos (offset voltage at 25°C) (max) (mV) | 4.5 |
| Rail-to-rail | No |
| Rating | Space |
| Operating temperature range (°C) | -55 to 125 |
| CMRR (typ) (dB) | 48 |
| Input bias current (max) (pA) | 15000000 |
| Offset drift (typ) (µV/°C) | 13 |
| Iout (typ) (mA) | 80 |
| 2nd harmonic (dBc) | 52 |
| 3rd harmonic (dBc) | 62 |
| Frequency of harmonic distortion measurement (MHz) | 20 |
| Radiation, TID (typ) (krad) | 300 |
| Radiation, SEL (MeV·cm2/mg) | Bipolar |
| Architecture | Current FB |
| Number of channels | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 10 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 12 |
| GBW (typ) (MHz) | 1700 |
| BW at Acl (MHz) | 1700 |
| Acl, min spec gain (V/V) | 1 |
| Slew rate (typ) (V/µs) | 3100 |
| Vn at flatband (typ) (nV√Hz) | 1.83 |
| Vn at 1 kHz (typ) (nV√Hz) | 4.5 |
| Iq per channel (typ) (mA) | 12.5 |
| Vos (offset voltage at 25°C) (max) (mV) | 4.5 |
| Rail-to-rail | No |
| Rating | Space |
| Operating temperature range (°C) | -55 to 125 |
| CMRR (typ) (dB) | 48 |
| Input bias current (max) (pA) | 15000000 |
| Offset drift (typ) (µV/°C) | 13 |
| Iout (typ) (mA) | 80 |
| 2nd harmonic (dBc) | 52 |
| 3rd harmonic (dBc) | 62 |
| Frequency of harmonic distortion measurement (MHz) | 20 |
| Radiation, TID (typ) (krad) | 300 |
| Radiation, SEL (MeV·cm2/mg) | Bipolar |
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| 原装正品 | 每颗芯片都来自原厂 |
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| 主要产品 | 只生厂材料 |
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| 现货库存 | 只生产原材料 |
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| 原装库存 | Bom 单 | 价格实惠 |
