| TYPE | DESCRIPTION |
| Architecture | FET / CMOS Input, Voltage FB |
| Number of channels | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 2.7 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 5.5 |
| GBW (typ) (MHz) | 200 |
| BW at Acl (MHz) | 200 |
| Acl, min spec gain (V/V) | 1 |
| Slew rate (typ) (V/µs) | 300 |
| Vn at flatband (typ) (nV√Hz) | 5.8 |
| Vn at 1 kHz (typ) (nV√Hz) | 5.8 |
| Iq per channel (typ) (mA) | 8.3 |
| Vos (offset voltage at 25°C) (max) (mV) | 9 |
| Rail-to-rail | In to V-, Out |
| Features | Shutdown |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 125 |
| CMRR (typ) (dB) | 80 |
| Input bias current (max) (pA) | 50 |
| Offset drift (typ) (µV/°C) | 7 |
| Iout (typ) (mA) | 100 |
| 2nd harmonic (dBc) | 81 |
| 3rd harmonic (dBc) | 93 |
| Frequency of harmonic distortion measurement (MHz) | 1 |
| Architecture | FET / CMOS Input, Voltage FB |
| Number of channels | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 2.7 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 5.5 |
| GBW (typ) (MHz) | 200 |
| BW at Acl (MHz) | 200 |
| Acl, min spec gain (V/V) | 1 |
| Slew rate (typ) (V/µs) | 300 |
| Vn at flatband (typ) (nV√Hz) | 5.8 |
| Vn at 1 kHz (typ) (nV√Hz) | 5.8 |
| Iq per channel (typ) (mA) | 8.3 |
| Vos (offset voltage at 25°C) (max) (mV) | 9 |
| Rail-to-rail | In to V-, Out |
| Features | Shutdown |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 125 |
| CMRR (typ) (dB) | 80 |
| Input bias current (max) (pA) | 50 |
| Offset drift (typ) (µV/°C) | 7 |
| Iout (typ) (mA) | 100 |
| 2nd harmonic (dBc) | 81 |
| 3rd harmonic (dBc) | 93 |
| Frequency of harmonic distortion measurement (MHz) | 1 |
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| 原装正品 | 每颗芯片都来自原厂 |
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| 主要产品 | 只生厂材料 |
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| 现货库存 | 只生产原材料 |
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| 原装库存 | Bom 单 | 价格实惠 |
